A metal gate CMOS process using Rapid Thermal Process is designed and experimented. To evaluate this CMOS process, test patterns are fabricated and the transistor model parameters are extracted. The performances of the fabricated devices are equivalent to the CMOS process using conventional standard process. Especially, implementations of the P-well with $\sim1\times10^{16}/cm^3$ doping concentration and N-field doping with $\sim1\times10^{17}/cm^3$ as well as S/D diffusions using rapid thermal diffusion(RTD) show that RTD can be successfully adopted for high and/or low impurity doping. Gate oxide of 150 A is grown by rapid thermal oxidation(RTO), and good characteristics of contact resistance are obtained using rapid thermal alloy(RTA). The threshold voltages of the fabricated devices are measured as -1.5 V for PMOS and 0.15 V for NMOS, which are shifted in negative direction from the expected threshold values by 0.5 V. These threshold voltage shifts are caused by high fixed surface charge density which is measured by $5\times10^{11}/cm^2$. However, the high fixed surface charge can be reduced to below $1\times10^{11}/cm^2$ by ion implantation or by a careful alloy process. Finally, the delay time per inverted is 32 nsec, which is measured from the ring-oscillator composed of 13 stages inverter chain.
