서지주요정보
규소 단결정 표면에서 레이저 광속으로 유기되는 구리 막의 침착 = Laser beam induced deposition of copper film on the surface of silicon single crystal
서명 / 저자 규소 단결정 표면에서 레이저 광속으로 유기되는 구리 막의 침착 = Laser beam induced deposition of copper film on the surface of silicon single crystal / 박영제.
저자명 박영제 ; Park, Young-Je
발행사항 [대전 : 한국과학기술원, 1990].
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소장정보

등록번호

8000506

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 9008

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초록정보

Two different methods of laser induced copper deposition on Si substrates were investigated. One was the photovoltaic deposition from an aqueous copper sulfate solution and the other was deposition by the photothermal decomposition of a solid copper acetate film, using a cw $Ar^+$ laser (514.5nm). Both resulted in the formation of copper spots and lines. The characteristics of the deposits formed by these two methods were compared. Line width and spot diameter were plotted as functions of laser power, scanning speed, irradiation time. Writing speed for photovoltaic deposition was lower than that for deposition by the photothermal decomposition. The surface structures of the deposits formed by the photovoltaic deposition were more smooth than those formed by the photothermal decomposition. The laser power density necessary for the photovoltaic deposition ($~10^2 W/cm^2$) was found to be much lower than that for photothermal decomposition($~10^5 W/cm^2$).

서지기타정보

서지기타정보
청구기호 {MAP 9008
형태사항 [ii], 54, [2] p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Young-Je Park
지도교수의 한글표기 : 공홍진
지도교수의 영문표기 : Hong-Jin Kong
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 55-56
주제 Pulsed laser deposition.
Copper.
규소. --과학기술용어시소러스
레이저. --과학기술용어시소러스
구리. --과학기술용어시소러스
증착. --과학기술용어시소러스
Silicon. --과학기술용어시소러스
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