Thin film of lead titanate was deposited onto the titanium substrate by Chemical Vapour Deposition (CVD) process, by using $Ti(C_2H_5O)_4, Pb, O_2$ gaseous mixture.
Analysis of Auger Electron Spectroscopy (AES) have been performed in order to find a chemical composition of lead titanate films. The effect of deposition time on the deposition rate and the effect of film thickness on the dielectric constant of deposited film have been studied.
The lead titanate film deposited on the titanium substrate at the deposition temperature 750°C, the $Ti(C_2H_5O)_4$ fraction 0.15 and $O_2$ partial pressure 0.06 atm, have stoichiometry composition. It is found that up to 60 minute, deposition reaction depend on the substrate reaction and after 60 minute deposition reaction depend on the overall reaction. The dielectric constant of deposited film increase with the film thickness. This phenomena can be explained by the increase of $PbTiO_3$ fraction.
