The vapor deposition of diamond on Si substrate has been studied hot-filament assisted chemical vapor deposition using acetone vapor diluted with hydrogen. Typically the growth conditions of diamond were as follows: acetone concentration, 0.8 vol %; total gas flow rate, 100 sccm; total pressure, 30 torr; filament temperature, 2100℃; substrate temperature, 800℃.
The deposits were identified as diamond by X-ray diffraction. The scratches of moderate size and shape on Si substrate are considered to promote the formation of diamond nuclei. The effects of deposition conditions on the growth morphology of diamond films and the crystal habit planes of isolated diamond particles are investigated to describe the growth mechanism of diamond. A development of (110) habit plane was observed on (111) habit plane.
