In this thesis an experimental photovoltaic infrared detector is designed and fabricated on a $Hg_{0.68}Cd_{0.32}Te$ LPE wafer. The device is designed based on the first order p-n junction theory. The PV detector has n-on-p structure in which the n-type layer is formed by boron implantation at 100 KeV with the dose of $10^{14}cm^{-2}$.
The detector showed relatively small value of $R_0A$, 22.7Ωㆍ㎠ at 77K, and large series resistance. The large series resistance is apparently due to the contact resistance. Separate measurements of contact resistance showed $10^{-3}\Omega\cdot cm^2$ for specific contact resistance between p-type HgCdTe and indium, which has been used for the metal layer. The capacitance-voltage measurements performed at 77K show that the built-in potential of the fabricated junction is 250 mV.
