N-channel Si-MOSFET's are fabricated in (100), (110), (111) wafers to find surface inversion layer electron mobility at high fields and the dependence on crystal orientation for which Monte Carlo simulation is also undertaken. To see electron mobility anisotropy, MOSFET's in (110) wafer are placed so that the current flow is either [001] or [110] direction. Experimental results show, i) the maximum mobility in different crystal orientation agrees quite well with theory, ii) electron surface mobility rolls off more rapidly in (111) wafer up to 1MV/cm than in (100) wafer. iii) mobility anisotropy in (110) wafer is observed and its experimental results shows the same behavior as the earlier work by Sun & Plummer and theory by C.T. Sah.
