A hybrid wideband amplifier is designed and implemented by negative feed-back structure with packaged Si bipolar junction transistor. Bias network is designed with an active device for stability of the operating point. The amplifier characteristics are simulated and optimized by Super-Compact microwave circuit simulator with de-embedded scattering parameters of active and passive devices, and compared with experimental data. About 1 GHz 3-dB bandwidth is obtained experimentally. Difference in $S_{21}$ between simulation and experiment is less than 2 dB in the whole frequency range, and $S_{11}$ and $S_{22}$ are similar in the tendency but have maximally 40% differences.
