Mathematical modeling equations of a parallel plate type reactor were obtained in the PECVD process of preparing hydrogenated amorphous silicon. Velocity profiles, temperature profiles and concentration profiles in the reactor were calculated from the model. The theoretical approach was attempted to obtain the deposition rate and film uniformity at different operating conditions by calculating RF discharge parameters and establishing the reaction mechanism of a-Si:H thin film. The modeling equations are solved by a finite difference method with control volume balance. The mean electron energy in discharge was applied to model simulation parameter. The magnitudes of the predicated deposition rates are in good agreement with those of experiment. The result of computer simulations shows that constant deposition profiles could be produced between r/Rb=0 and r/Rb=0.4 (Rb:Radius of the bottom electrode, r: radial distance from the stagnant point on the deposition surface).
