An integrated a-Si solar cell module with δ-doped p-layer as a window layer has been fabricated by a photolithography method.
The efficiency loss suffered during the process could be prevented by coating Al electrode right after the a-Si deposition before any further processing. It's conversion efficiency and fill factor for three active cells are 6.73%, 56.8% respectively under the solar simulator of 20mW/㎠, while its efficiency under the sunlight is 5.6%.
The investigation of the solar cell characteristics under the varing intensity conditions indicates that the series resistance of TCO is the major cause of the decrease in efficiency with the increase of light intensity.
