The dependence of the physical properties in Ag and Ag/ Pd thick film conductors on the ingredient materials and microstructure was studied.
As a function of the composition and the quantity in glass frit, the microstructure and homogeneity of thick film conductors were changed. This phenomena affected deeply the final electrical properties of thick film conductors.
The objective of this study was to establish sintering mechanism of Ag and Ag/Pd particles in the liquid matrix of the glass frit and to comprehend the effect of microstructure on the electrical properties of Ag and Ag/Pd thick film conductors.
With increasing sintering temperature in the Ag-glass frit thick film, electrical sheet resistivity decreased, but again increased above 850℃. When glass content is 5wt%, compact and homogenious microstructure can be obtained, then electrical sheet resistivity has minimum value.
In Ag/Pd-glass frit thick film, the electrical sheet resistivity decreased with increasing sintering temperature. The system which having glass with low softening point has lower sheet resistivity than to add high softening point glass.
Grain growth mechanism of Ag particle in the glass metrix had different feature as glass content. When glass was 2wt%, the grain growth mechanism of Ag was normal grain growth, but when glass content above 5 wt%, the grain growth mechanism of Ag particle in the glass metrix was diffusion controlled Ostwald ripening.
