Mathematical modelling and simulation study of horizontal type chemical vapor deposition reactor was carreid out for the prediction of film gowth rate and uniformity and for the investigation of the effects of flow phenomena and other operating conditions.
In order to solve 2-dimensional momentum, energy, material balance equations, finite volume numerical technique was used.
Experimental data were obtained in atmospheric reactor by the reaction of $CH_4$ and $SiH_4$ in $H_2$ to produce SiC film on silicon wafer at 650℃-850℃.
Kinetic rate model regressed from the experimental deposition rate was used for the simulation of large scale production of thin films.
At a high reaction rate, low flow rate or large temperature gradients increase film non-uniformity and at low total pressure uniform growth rate was verified.
