The thermally induced metastabilities of hydrogenated amorphous silicon have been studied in undoped, doped, and compensated samples by Photoluminescence. In compensated sample, rapid cooling effect has been observed for the first time. Photoluminescence intensity decreases in undoped sample, and increases in doped and compensated samples after rapid cooling above respective equilibrium temperatures.
In all cases, Photoluminescence changes are discussed from the viewpoint of changes of dangling bound densities. And, the promissing microscopic processes are proposed to explain origins of the thermally induced metastabilities in doped and compensated samples.
