Rapid thermal annealing(RTA) 을 이용한 n-GaAs 에서의 ohmic 접촉 = Ohmic contacts to n-GaAs using RTA(rapid thermal annealing)

• 서명 / 저자: Rapid thermal annealing(RTA) 을 이용한 n-GaAs 에서의 ohmic 접촉 = Ohmic contacts to n-GaAs using RTA(rapid thermal annealing) / 최득성.
• 발행사항: [서울 : 한국과학기술원, 1987].

The system of RTA(Rapid Thermal Annealing) for III-V ohmic contacts was designed and implemented.
Heating rate of RTA system is 50℃/sec. Ohmic contacts were made by RTA on n-type GaAs wafer on which Au-Ge/Ni (1000Å/800Å) film is evaporated. Metal sheet resistance is reduced by plating Au with the thickness of 2-3㎛.
TLM(Transmission Line Model) measurement method for reactanqular test patterns was imployed to determine the specific contact resistance.
Specific contact resistance was evaluated according to the change of alloy temperature and time so that the minimum specific contact resistance of $5.5×10^{-6}Ω-㎠$ was obtained.

• 형태사항: [ii], 50 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 저자명의 영문표기 : Duk-Sung Choi ; 지도교수의 한글표기 : 권영세 ; 지도교수의 영문표기 : Young-Se Kwon
• 학위논문: 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
• 서지주기: 참고문헌 수록
• 주제: Semiconductor wafers. ; Gallium arsenide semiconductors. ; Ohmic contacts. ; 열 확산. --과학기술용어시소러스 ; Ohm 접촉. --과학기술용어시소러스 ; 웨이퍼 (IC) --과학기술용어시소러스 ; 비소화 갈륨. --과학기술용어시소러스 ; Thermal diffusivity.