3μm gate length 를 갖는 GaAs MESFET 제작 = Fabrication of GaAs MESFET with a 3μm gate length

• 서명 / 저자: 3μm gate length 를 갖는 GaAs MESFET 제작 = Fabrication of GaAs MESFET with a 3μm gate length / 이윤종.
• 발행사항: [서울 : 한국과학기술원, 1986].

The GaAs MESFET with the gate length of 3㎛ is fabricated by using the mask aligner which was made in our laboratory. Its gate metal is cromium. The transconductance gm of 15mS/mm is obtained.
The separation of source and drain of the fabricated GaAs MESFET is 10㎛ and it is the value down to 1/3 in physical dimension of those made in our laboratory up to now.
The fabrication of GaAs MESFET with shorter gate length compared withthat made in this thesis is needed for the more stable and the better D.C. characteristics.

• 형태사항: [ii], 43 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 저자명의 영문표기 : Yoon-Jong Lee ; 지도교수의 한글표기 : 권영세 ; 지도교수의 영문표기 : Young-Se Kwon
• 학위논문: 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
• 서지주기: 참고문헌 : p. 41-43
• 주제: Masking (Chemistry) ; Metal semiconductor field-effect transistors. ; MESFET. --과학기술용어시소러스 ; 비소화갈륨. --과학기술용어시소러스 ; 전기적 성질. --과학기술용어시소러스 ; 게이트 (반도체) --과학기술용어시소러스 ; Gallium arsenide semiconductors.