An X-band Oscillator using a dielectric resonator and GaAs MESFET is designed and constructed. A GaAs FET oscillator stabiized by ceramic dielectric resonator provide a high frequency stabilization and low-noise compact microwave power source.
The ceramic resonator has an expansion coefficient which offsets of dielectric constant and gives a small temperature coefficient at the resonant frequency.
Output power of 24mW with 18% efficiency and a frequency tunning range as broad as 700 MGHz are obtained at 10.7 GHz.
The hysteresis of the output power and oscillation frequency by varying bias voltage of FET and the tunning of the resonator are precisely measured and the equvalent circuit representation of the resonator is identified.