1.3um GaInAsP/InP DH stripe-geometry laser diodes are fabricated by L.P.E. (Liquid Phase Epitaxy) technique. L.P.E. system was newly constructed for the growth of quaternary epitaxial layers. The lattice-matched GaInAsP epitaxial layer was successfully grown on an InP substrate. The misfit of hetero-epitaxial layers, Δa/a, was less than 0.05%. The surface of grown layers was flat and featureless.
Four layers including GaInAsP (λ=1.3um) layer were grown for the fabrication of laser diodes. The thickness of active layer was 0.9um. The width of stripes was 10-30um. Under the pulsed operation, threshold current, Ith, and the normalized threshold current density, $J_{th}/d$, were 700mA and 7KA/㎠/um, respectively.
본 논문에서는 1.3㎛파장 영역에서 동작하는 GaInAsP/InP stripe 구조 laser diode 의 제작을 다루었다.
소자제작을 위하여 새로운 L.P.E(Liquid Phase Epitaxy) System이 설치되었다. 새로 설치된 System으로 InP 기판위에 lattice-matching 된 GaInAsP 결정이 L.P.E. 방법으로 성장되었다. 성장된 결정의 mismatching 정도, Δa/a, 는 0.05% 이하였다.
InP 기판위에 4개의 epitaxial 층을 성장시킨 wafer로 1.3㎛ GaInAsP/InP laser diode를 제작하였다. 제작된 diode 는 stripe 구조였으며 stripe 폭은 10~30㎛이였다.
제작된 소자의 threshold 전류는 700mA였고 normalized threshold 전류밀도(J th/d)는 7KA/㎠/㎛이였다.
