서지주요정보
실리콘 웨이파에서 Denuded zone 형성 및 generation lifetime 증가 효과 = Denuded zone formation and generation ligetime improvement in silicon wafers
서명 / 저자 실리콘 웨이파에서 Denuded zone 형성 및 generation lifetime 증가 효과 = Denuded zone formation and generation ligetime improvement in silicon wafers / 김현수.
저자명 김현수 ; Kim, Hyeon-Soo
발행사항 [서울 : 한국과학기술원, 1985].
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소장정보

등록번호

4103460

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 8542

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초록정보

In this study, denuded zone and generation lifetime in the near-surface region of CZ grown n-type silicon were investigated by means of optical microscope and MOS C-T measurement. About 50 μm denuded zone depth was obtained by high-low-high three step annealing conditions ( 1100℃ for 20 hrs, 750℃ for 16 hrs in $N_2$ ambient and 1000℃ for 12 hrs $O_2$ ambient) and oxygen out-diffusion model was represented to explain the observed denuded zone. The interstitial oxygen level that allow bulk microdefect formation was determined by oxygen out-diffusion model and the observed denuded zone depth and that level was about 12.4 ppma. Generation lifetime for annealed sample with 50 μm denuded zone depth was about 8 times higher than non-annealed sample and the lifetime was closely related to the surface and bulk defects.

서지기타정보

서지기타정보
청구기호 {MAP 8542
형태사항 [iii], 52 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hyeon-Soo Kim
지도교수의 한글표기 : 이주천
지도교수의 영문표기 : Choo-Chon Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 49-50
주제 Silicon.
Semiconductor wafers.
Domain structure.
웨이퍼 (IC) --과학기술용어시소러스
규소. --과학기술용어시소러스
수명 (생애) --과학기술용어시소러스
구역. --과학기술용어시소러스
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