In this study, denuded zone and generation lifetime in the near-surface region of CZ grown n-type silicon were investigated by means of optical microscope and MOS C-T measurement.
About 50 μm denuded zone depth was obtained by high-low-high three step annealing conditions ( 1100℃ for 20 hrs, 750℃ for 16 hrs in $N_2$ ambient and 1000℃ for 12 hrs $O_2$ ambient) and oxygen out-diffusion model was represented to explain the observed denuded zone.
The interstitial oxygen level that allow bulk microdefect formation was determined by oxygen out-diffusion model and the observed denuded zone depth and that level was about 12.4 ppma.
Generation lifetime for annealed sample with 50 μm denuded zone depth was about 8 times higher than non-annealed sample and the lifetime was closely related to the surface and bulk defects.
