서지주요정보
기상 Epitaxy 에 의한 GaAs와 $GaAs_{1-x}P_x$ 결정성장 및 특성조사 = Characterization of GaAs and $GaAs_{1-x}P_x$ grown by hydride vapor phase epitaxy
서명 / 저자 기상 Epitaxy 에 의한 GaAs와 $GaAs_{1-x}P_x$ 결정성장 및 특성조사 = Characterization of GaAs and $GaAs_{1-x}P_x$ grown by hydride vapor phase epitaxy / 조훈영.
저자명 조훈영 ; Cho, Hun-Young
발행사항 [서울 : 한국과학기술원, 1985].
Online Access 제한공개(로그인 후 원문보기 가능)원문

소장정보

등록번호

4103326

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 8536

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Epitaxial GaAs and $GaAs_{1-x}P_x$ are grown on (100) GaAs substrate in $Ga-HCl-AsH_3-PH_3-H_2$ system. The effect of growth parameters such as temperature, partial pressure of reactant gases on the surface morphology, carrier concentration and compensation ratio are investigated. Surface morphology depends on the mole ratio of Ga to As (or P) in the vapor phase. When $P_{Ga}/P_{As}$ is 0.75 during GaAs growth, it shows defect free surface without hillocks or pits at the growth rate of 20-30μm/hr. In $GaAs_{1-x} P_x$, cross hatch pattern having orthogonal arrays appears on the surface due to the lattice mismatch between $GaAs_{1-x}P_x$ and GaAs. Carrier concentration and mobility have a close relationship with the growth parameters. The typical values of them are $1.75\times10^{15}cm^{-3}$, 6,600 $cm^2$/V-sec at room temperature, and $1.45\times10^{15}cm^{-3}$, 25,800 $cm^2$/V-sec at 77˚k and compensation ratio $N_A^-/N^+_D$ ranges from 0.5 to 0.85. The relation between the direct Γ-band energy of $GaAs_{1-x}P_x$ and phosphorus concentration, X is obtained experimentally as $E_Γ(X)=1.435 + 0.865X + 0.210X^2 $(eV) 300˚K. Isoelectronic impurity, nitrogen, in $GaAs_{1-x}P_x$ is also investigated by using photovoltage measurement. Experimentally measured electron mobility is fitted to the theoretical value taking all scattering mechanisms into consideration, in order to obtain impurity concentration($N_I$) and space charge factor ($N_sQ$).

서지기타정보

서지기타정보
청구기호 {MAP 8536
형태사항 [iii], 64 p. : 삽도 ; 26 cm
언어 한국어
일반주기 부록 수록
저자명의 영문표기 : Hun-Young Cho
지도교수의 한글표기 : 이주천
지도교수의 영문표기 : Choo-Chon Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 61-62
주제 Epitaxy.
Phosphorus.
비소화갈륨. --과학기술용어시소러스
표면 성질. --과학기술용어시소러스
인 (원소) --과학기술용어시소러스
Gallium arsenide semiconductors.
QR CODE qr code