서지주요정보
a-Si:H 에서 온도변화에 따른 광여기효과 연구 = A study on temperature dependence of light induced effect in hydrogenated amorphous silicon by photoluminescence fatigue
서명 / 저자 a-Si:H 에서 온도변화에 따른 광여기효과 연구 = A study on temperature dependence of light induced effect in hydrogenated amorphous silicon by photoluminescence fatigue / 박철홍.
저자명 박철홍 ; Pak, Chul-Hong
발행사항 [서울 : 한국과학기술원, 1985].
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소장정보

등록번호

4103351

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 8514

SMS전송

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초록정보

The light induced effect in a-Si:H films prepared by rf glow discharge deposition of silane have been investigated by means of photoluminescence fatigue. The temperature dependence of the light induced effect was measured from 10 K to 250 K. It was found that the mechanisms of the light induced change at low temperature could be different from that at high temperature and that there is no change in photoluminescence intensity after light soaking at 150 K. The sample with lower substrate temperature showed larger light induced change. Some existing models of the light induced effect was compared with these results and the results was interpreted with the help of the model suggested by Adler.

서지기타정보

서지기타정보
청구기호 {MAP 8514
형태사항 [ii], 42 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Chul-Hong Pak
지도교수의 한글표기 : 이주천
지도교수의 영문표기 : Choo-Chon Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 40-41
주제 Silicon.
Silicon diode --Effect of temperature on.
Photoluminescence.
수소화. --과학기술용어시소러스
규소. --과학기술용어시소러스
온도 종속성. --과학기술용어시소러스
광 루미네센스. --과학기술용어시소러스
Hydrogenation.
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