The light induced effect in a-Si:H films prepared by rf glow discharge deposition of silane have been investigated by means of photoluminescence fatigue.
The temperature dependence of the light induced effect was measured from 10 K to 250 K. It was found that the mechanisms of the light induced change at low temperature could be different from that at high temperature and that there is no change in photoluminescence intensity after light soaking at 150 K. The sample with lower substrate temperature showed larger light induced change.
Some existing models of the light induced effect was compared with these results and the results was interpreted with the help of the model suggested by Adler.
