TiC was deposited onto WC-6 Co sintered carbide substrates by a chemical vapor deposition technique from $TiCl_4-H_2-C_3H_8$ gas mixture in a horizontal resistance furnace.
Deposition rate and the morphology of the coatings were investigated above 850℃ with the m Ti/C, deposition time, total flow rate of the reactant gases, the location of specimens and with the deposition pressure. The TiC deposition rate was higher than using methane due to the faster pyrolysis of propane than methane. Also, TiC formation reaction had occurred in the gas phase and coarse particles of TiC from homogeneous nucleations were observed.
By increasing the gas velocity and reducing the deposition pressure, the homogeneous reaction was diminished and the heterogeneously deposited surface morphology resulted. Theoretical deposition efficiency and the supersaturation of the reactants can also be enhanced by reducing the deposition pressure, which resulted in fine and uniform crystal size distributions.
The preferred orientation of the TiC deposits was (200).
