I/V characteristics of several silicon gate n-channel MOSFET's were obtained and used to extract the SPICE2.G MOSFET model parameters using the least square method. A reasonable agreement has been obtained between the I/V characteristics from the measurement and that reconstructed from the measured data using SPICE model equations.
A 2-dimensional distribution of the electron, impurity concentration, mobility and potential has been obtained for short and long channel devices using MINIMOS, a 2-dimensional MOSFET simulation program. Two dimensional data obtained from MINIMOS were displayed using graphic software such as surface plotting routine, and contour generator.
