The photoluminescence fatigue in hydrogenated amorphous silicon films prepared by dc glow discharge decomposition of silane has been investigated. It is found that the photoluminescence intensity is decreased, at first rapidly, and the photoluminescence fatigue saturated as the illumination time is increased. The ratio of the luminescence intensity after illumination to that before illumination decreases as the concentration of hydrogen in the sample is increased. The saturation time of the luminescence fatigue is decreased as the substrate temperature of the sample is decreased.
The possible interpretation of the results is suggested with relation to the other light induced properties of the hydrogenated amorphous silicon films.