수소화된 비정질규소의 장시간 조광에 의한 포토루미네선스의 변화 = Photoluminescence changes in hydrogenated amorphous silicon after prolonged illumination

• 서명 / 저자: 수소화된 비정질규소의 장시간 조광에 의한 포토루미네선스의 변화 = Photoluminescence changes in hydrogenated amorphous silicon after prolonged illumination / 차명식.
• 발행사항: [서울 : 한국과학기술원, 1984].

The photoluminescence fatigue in hydrogenated amorphous silicon films prepared by dc glow discharge decomposition of silane has been investigated. It is found that the photoluminescence intensity is decreased, at first rapidly, and the photoluminescence fatigue saturated as the illumination time is increased. The ratio of the luminescence intensity after illumination to that before illumination decreases as the concentration of hydrogen in the sample is increased. The saturation time of the luminescence fatigue is decreased as the substrate temperature of the sample is decreased.
The possible interpretation of the results is suggested with relation to the other light induced properties of the hydrogenated amorphous silicon films.

• 형태사항: [iii], 35 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 저자명의 영문표기 : Myoung-Seak Cha ; 지도교수의 한글표기 : 김종진 ; 공동교수의 한글표기 : 이주천 ; 지도교수의 영문표기 : Jong-Jean Kim ; 공동교수의 영문표기 : Choo-Chon Lee
• 학위논문: 학위논문(석사) - 한국과학기술원 : 물리학과,
• 서지주기: 참고문헌 : p. 34-35
• 주제: Amorphous semiconductors. ; Silicon. ; Photoluminescence. ; 수소화. --과학기술용어시소러스 ; 비정질 반도체. --과학기술용어시소러스 ; 규소. --과학기술용어시소러스 ; 광 루미네센스. --과학기술용어시소러스 ; Hydrogenation.