서지주요정보
GaAs-GaAlAs 반도체 레이저의 발진 모드와 이득분석 = Analyses of oscillating mode and gain of GaAs-GaAlAs diode laser
서명 / 저자 GaAs-GaAlAs 반도체 레이저의 발진 모드와 이득분석 = Analyses of oscillating mode and gain of GaAs-GaAlAs diode laser / 최병소.
저자명 최병소 ; Choi, Byoung-So
발행사항 [서울 : 한국과학기술원, 1984].
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등록번호

4102385

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 8425

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초록정보

The spectral output of cw DH GaAs/GaAlAs laser is analyzed by using Czerny-Turner spectrometer at room temperature. Below the threshold current (85mA), the effect of the spontaneous emission is observed and it decreases with the increasing current, the spectral width at FWHM being about 50 - 240Å. Above the threshold current, the stimulated emission is abruptly narrowed, and the single mode operation is obtained. Each longitudinal mode is composed of four transverse modes and the mode spacing between the 0th and 1st transverse mode is increased from 0.61 Å at 64mA to 1.2 Å at 96mA. By using the theory of Hermite-Gaussian mode, FWHM is calculated for the transverse optical field distribution inside the resonator and it is found that FWHM is 7.2 ㎛ at 64 mA and 5.3 μm at 96 mA of injection current. Below the threshold current, the net gain coefficient is obtained and based on the measurement of the ratio of the maximum to minimum of the Fabry-Perot resonance of the spontaneous emission, at the wavelength of the peak intensity (λ_p=8350Å), the net gain coefficient is found as a linear function of the injection current and its slope is about 3.2 $cm^{-1}$/mA. The shift of the spectral mode is measured as a function of the injection current, the total shift of the spectral mode at the threshold current is about -13.4Å and the equivalent reduction of the refractive index is 0.006. This result agrees with the previously reported result by Thompson.(17)

서지기타정보

서지기타정보
청구기호 {MAP 8425
형태사항 iv, 70 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Byoung-So Choi
지도교수의 한글표기 : 이상수
지도교수의 영문표기 : Sang-Soo Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 66-68
주제 Aluminum.
Semiconductor lasers.
비소화갈륨. --과학기술용어시소러스
비소화갈륨알루미늄. --과학기술용어시소러스
반도체 레이저. --과학기술용어시소러스
레이저 발진. --과학기술용어시소러스
이득. --과학기술용어시소러스
Gallium arsenide semiconductors.
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