서지주요정보
R.F.스퍼터링에 의해 수소가 첨가된 비정질규소의 성질에 수소분압이 미치는 영향 = Effects of the hydrogen partial pressure on the properties of R.F. sputtered a-Si:H
서명 / 저자 R.F.스퍼터링에 의해 수소가 첨가된 비정질규소의 성질에 수소분압이 미치는 영향 = Effects of the hydrogen partial pressure on the properties of R.F. sputtered a-Si:H / 김장한.
저자명 김장한 ; Kim, Jang-Han
발행사항 [서울 : 한국과학기술원, 1984].
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4102366

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 8406

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초록정보

The electrical and optical properties of hydrogenated amorphous silicon, prepared by R.F. sputtering in Ar/$H_2$ mixture with various hydrogen partial pressure ($P_H$), have been investigated. All the samples were prepared at a fixed power(300W) and substrate temperature(200℃), and the thickness ranged between 1.0 and 1.5㎛ . The film properties were characterized by measuring the dark conductivity, optical band gap, and infrared vibrational absorption. The hydrogen could be incoporated into silicon matrix in concentrations from 5% to 27% (in atomic percent) by increasing the hydrogen partial pressure. For the low $P_H$(<2 mTorr), the localized states in the gap were reduced, and activation energy of conductivity and the optical band gap increased with $P_H$ due to the compensation of dangling bonds and other defects by H. For the high $P_H$(>2 mTorr), activation energy and optical band gap were increased slowly, conductivity decreased as $P_H$ is increased, even when the hydrogen content saturated and decreased. These results may be interpreted in terms of the decreasing of carrier mobility and change of the DOS near the band edge due to the increasing of dihydride bonds relative to the monohydride bonds with $P_H$, instead of the compensation of dangling bond by H.

서지기타정보

서지기타정보
청구기호 {MAP 8406
형태사항 [ii], 38 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jang-Han Kim
지도교수의 한글표기 : 김종진
공동교수의 한글표기 : 이주천
지도교수의 영문표기 : Jong-Jean Kim
공동교수의 영문표기 : Choo-Chon Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 36-38
주제 Amorphous semiconductors.
Silicon.
Radio frequency.
Sputtering (Physics)
수소화. --과학기술용어시소러스
RF 시스템. --과학기술용어시소러스
스퍼터링. --과학기술용어시소러스
비정질 반도체. --과학기술용어시소러스
규소. --과학기술용어시소러스
Hydrogenation.
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