Experiments nitriding silicon with addition of $Si_3N_4$ have provided information on the effects of such inclusion on the phase relationships of Reaction Bonded Silicon Nitride.
In the current work, specimens containing 0-25 wt.% $Si_3N_4$, which have 55.5wt.% α, 4.5wt.% β, 40wt.% Amorphous phase, were nitrided for 7-20 hours at 1300-1350℃. The evaluation of nitridation was performed by means of α-and β-phase contents determination in nitrided specimens. In order to observe nitrided region between silicon and silicon nitride, scanning electron microscopy was used to study reacted region between silicon and silicon nitride particle. For this purpose, semiconductor-grade silicon wafer single crystal was used as a silicon source.
The incorporation of small amount of $Si_3N_4$ "Seed" materials does indeed switch the balance of product. As the $Si_3N_4$ power is added, the amount of reaction is increased. Added $Si_3N_4$ powder is contributed to enhancing the rate of formation of α-phase.
