Liquid Phase Epitaxy (LPE) is a very important technique for the fabrication of various III-V solid state devices. In this thesis LPE system is implemented and operated successfully. The temperature gradient of the system is 0.17℃/cm and the long term temperature fluctuation is about ±0.07℃. The grown GaAs epitaxial layers were proved to be single crystal by X-ray diffraction pattern. Various surface morphologies of GaAs epitaxial layer were observed. The thicknesses of undoped GaAs layers fitted well to the theoretical values, which shows that there is no convection assisted growth. AlGaAs layers were grown also and analysized by EDAX. Multiple-layer could be grown and GaAs/AlGaAs double heterostructure was grown with 0.5μm thick active layer.
Homojunction and double heterojunction light emitting diode were fabricated and their V-I, L-I characteristics were measured.
