Effects associated with the addition of trichloroethylene (TCE) to a dry oxygen atmosphere during the thermal oxidation process have been investigated.
Oxidations were performed at 1000℃ varying the time from 10 min to 200 min and the TCE/$O_2$ volume percentage from 0% to 1.2%. Using MOS capacitors with and without TCE, oxide thickness, mobile ionic charge, fixed oxide charge, flatband voltage, dielectric breakdown voltage, storage time and minority carrier lifetime were measured.
Oxidation rate was increased by 10-16% from the oxidation time tested when the TCE/$O_2$ is 1.2%. The variations of flatband voltage were less than 60mV for MOS capacitors fabricated with TCE oxide, and the dielectric breakdown voltages of 90% capacitors were uniform within 10 volt. Stabilizing effects of the threshold voltage and the dielectric breakdown voltage were almost uniform 0.6-1.0% TCE/$O_2$ volume percentage.