서지주요정보
TCE 가 실리콘 산화공정에 미치는 영향 = The effects of TCE on the silicon oxidation process
서명 / 저자 TCE 가 실리콘 산화공정에 미치는 영향 = The effects of TCE on the silicon oxidation process / 최태현.
저자명 최태현 ; Choi, Tai-Hyun
발행사항 [서울 : 한국과학기술원, 1982].
Online Access 제한공개(로그인 후 원문보기 가능)원문

소장정보

등록번호

4101742

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 8233

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Effects associated with the addition of trichloroethylene (TCE) to a dry oxygen atmosphere during the thermal oxidation process have been investigated. Oxidations were performed at 1000℃ varying the time from 10 min to 200 min and the TCE/$O_2$ volume percentage from 0% to 1.2%. Using MOS capacitors with and without TCE, oxide thickness, mobile ionic charge, fixed oxide charge, flatband voltage, dielectric breakdown voltage, storage time and minority carrier lifetime were measured. Oxidation rate was increased by 10-16% from the oxidation time tested when the TCE/$O_2$ is 1.2%. The variations of flatband voltage were less than 60mV for MOS capacitors fabricated with TCE oxide, and the dielectric breakdown voltages of 90% capacitors were uniform within 10 volt. Stabilizing effects of the threshold voltage and the dielectric breakdown voltage were almost uniform 0.6-1.0% TCE/$O_2$ volume percentage.

서지기타정보

서지기타정보
청구기호 {MEE 8233
형태사항 [ii], 46, [50] p. : 삽도 ; 26 cm
언어 한국어
일반주기 부록 : 1, 고주파 C-V Curve. - 2, C-t curve 와 zerbst plot
저자명의 영문표기 : Tai-Hyun Choi
지도교수의 한글표기 : 김충기
지도교수의 영문표기 : Choong-Ki Kim
학위논문 학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과,
서지주기 참고문헌 : p. 42-45
주제 Trichloroethylene.
Metal oxide semiconductors.
Breakdown voltage.
MOS 집적회로. --과학기술용어시소러스
고온 산화. --과학기술용어시소러스
Electrolytic oxidation.
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