Transport and recombination mechanisms are studied for the amorphous Si films from the temperature dependence of drift mobility, conductivity and photoconductivity.
Three kinds of a-Si films are produced by DC glow discharge method at Ts=310 K in different substrate positions to the discharging electrodes, and one of which is doped with phosphorus of 200 vppm.
Room temperature electron drift mobilities are 4.3 and $9.0×10^{-4} ㎠/sec.V$ for two undoped films and $4.5× 10^{-4} ㎠/sec.V$ for the P-doped film.
The data can be interpreted that the main transport is the extended state conduction and recombination occurs mainly between electrons at $E_A$ and holes at $E_Y$ in temperature range 220-290K, and for the doped film, the phonon assisted hopping in the donor band is the dominant transport mechanism, and electrons in the donor band recombine with holes at $E_Y$ in temperature range 230-300K.
