A 64-Bit Silicon-Gate N-MOS STATIC RAM has been designed and fabricated for the purpose of application of Silicon-Gate Technology to digital MOS LSI (Large Scale Integrated circuits) and investigation of possibility of manufacturing STATIC RAM.
Inverters and NOR gates are organized with saturated depletion load. RAM cells occupied 97.5 × 140 $㎛^2$/bit area with minimum pattern geometry 10 ㎛.
The operation of fabricated devices (KM0064) was successful with operating voltage of 5 V, maximum power consumption of 30 mW, minimum access time of 360 nsec, and TTL compatibility.
