Effects of TCE($C_2HCl_3$) Oxidation on Interface Trap Density and Minority Carrier Generation Lifetime were experimentally observed.
As a comparative standard, oxidation temperature and oxidation time were 1100℃ and 20 min., respectively. The flow rate or dry $O_2$ was 1500 cc/min. TCE oxides were grown under the same conditions, but with varying the flow rate of dry $N_2$ through a bubbler filled with TCE. The temperature of the bubbler was constant at 23℃ within a few degrees.
Interface Trap Density was measured with the Quasi-Statid C-V method and Minority Carrier Generation Lifetime with the C-t measurement.
Interface Trap Density of the non-TCE oxidized samples was $2.5×10^{10}[eV^{-1}cm^{-2}]$ in the middle of the energy gap of silicon. But, that of the TCE oxidized samples was $1×10^{10}[eV^{-1}cm^{-2}]$ in the middle of the energy gap of silicon when the flow rate of dry $N_2$ was about 40 cc/min.
When the flow rate of dry $N_2$ was 40 to 60 cc/min., Minority Carrier Generation Lifetime of the TCE oxidized samples was about 500 micro-sec. In contrast with the non-TCE oxidized samples whose Minority Carrier Generation Life-time was a few to tens micro-sec.
As a result of TCE Oxidation, Interface Trap Density was reduced by 40% and Minority Carrier Generation Lifetime was increased by almost 10 times or more.
