The various electronic properties of a-Si(H) Schottky barrier solar cells are investigated experimentally. The I-V characteristics of Pd/a-Si(H) Schottky barrier which exhibit nearly similar to those of crystalline Si suggest that current transport is nearly diffusion-limited rather than recombination-limited. The dependence of photo-currents on the wavelength of light shows that only the photo generated carrier in field region can contribute to the photocurrents.
This can also be supported by the measurement of monochromatic photo current as a function of reverse bias voltage. Furthermore, the collection efficiency as a function of depletion width show field-dependent form, which suggests that most of photo generation of carriers may be primarily due to field-assisted thermal ionization.
Finally, our Pd/a-Si(H) solar cells show that under illumination of ~25 mW (actual sunlight) an open circuit voltage of 460 mV and short circuit current of 0.53 mA/㎠ are measured, respectively. The fill factor is 0.55 and conversion efficiency is 1.6%.
$SiH_4$ 를 DC 글로우 방전 분해시켜 만든 a-Si(H)로서 제작된 Schottky barrier 태양전지의 각종 물리적 성질을 실험적으로 고찰하였다. I-V특성곡선은 crystal 경우와 비슷하여 currenttransport는 diffusion-limited에 의하여 결정됨을 보였다. photoourrent 의 광파장에 따른 변화는 field region에서 생성된 carrier가 photocurrent에 대부분 기여함을 암시했으며, 이러한 사실은 monochromatic photocurrent의 reverse bias에 따른 측정에 의하여 뒷받침되었다. 또한, depletion width의 함수로 표시되는 collection efficiency는 강하게 fielddependent form을 나타내어 photo carrier의 생성이 fieldassisted thermal ionization에 기인한다는 사실을 암시했다. 끝으로, 우리의 Pd/a-Si(H) 태양전지는 25 mW의 실제의 sunlight에서 460 mV의 Voc와 0.53 mA/㎠의 Jsc를 보여 주었고, 0.55의 fill factor와 1.6%의 conversion efficiency가 측정되었다.
