The growth rate and the mechanical properties of chemically vapor deposited TiC on WC-6% Co substrate were investigated by depositing TiC on varying deposition temperatures, total pressure in the reaction chamber, and the partial pressure of $CH_4$ in gas mixtures. TiC is deposited by two different reactions; such as substrate reaction and hydrocarbon reaction. Each activation's energy was calculated at 69.4 Kcal/mole and 18.3 Kcal/mole, respectively. The growth rate of the TiC coating layer was increased with deposition temperatures, the total pressure in the reaction chamber, and the partial pressure of $CH_4$ in gas mixtures. The microhardness of the TiC coating layer was increased until the thickness of the coating layer was up to 7 μm. The microhardness of the TiC coating layer was increased as the partial pressure of $CH_4$ was increased. Thermal shock resistance decreased as the thickness of TiC coating layer was increased. The TiC coating layer showed 〈100〉 preferred orientation as the partial pressure of $CH_4$ in the gas mixtures was increased.
WC-6% Co 소결 경질 탄화물에 화학증착법으로 TiC를 증착시켜, 증착온도, 반응 chamber 중의 전체 압력, $CH_4$의 분압에 따른 증착층의 성장속도와 그 기계적 성질을 조사하였다.
소결 경질 탄화물에 TiC를 화학 증착시킬 경우, substrate reaction 과 hydrocarbon reaction 의 두 반응에 의하여 TiC가 증착된다.
본 실험에 의하여 산출된 substrate reaction의 activation energy는 18.3 Kcal/mole, hydrocarbon reaction의 activation energy는 69.4 Kcal/mole이었다.
TiC 증착층의 성장속도는, 증착 온도가 높을수록, 반응 chamber 내의 압력이 높을수록, 반응 gas중의 $CH_4$의 분압이 높을수록 증가하였다.
TiC 증착층의 미소 경도는 증착층의 두께가 7 μm에 이를 때까지 계속 증가하였으며, 같은 두께라도 $CH_4$의 분압을 높게하여 증착시킨 경우의 미소 경도가 $CH_4$의 분압을 낮게하여 증착시킨 경우의 미소경도보다 더 높았다.
그리고 TiC 증착층의 열 충격 저항은 증착층의 두께가 두꺼울수록 감소하였다.
반응 gas 중의 $CH_4$ 분압을 높게하여 증착시켜 줄 경우, TiC 증착층은 〈100〉preferred orientation을 나타내었다.
