Ammonium tartrate$((NH_4)_2 C_4H_4O_6)$ 를 이용한 aluminum 양극산화방법과 I. C. 제작에의 응용 = Experimental study on the aluminum anodization using ammonium tartrate$((NH_4)_2 C_4H_4O_6)$ and its application to I. C. fabrication

• 서명 / 저자: Ammonium tartrate$((NH_4)_2 C_4H_4O_6)$ 를 이용한 aluminum 양극산화방법과 I. C. 제작에의 응용 = Experimental study on the aluminum anodization using ammonium tartrate$((NH_4)_2 C_4H_4O_6)$ and its application to I. C. fabrication / 신윤승.
• 발행사항: [서울 : 한국과학기술원, 1980].

Dielectric constant, unit barrier thickness and breakdown voltages of anodic $Al_2O_3$ using 2% ammonium tartrate $((NH_4)_2C_4H_4O_6)$ aqueous solution as an electrolyte are measured and problems in the application of aluminum anodization method to the I.C. fabrication are studied experimentally.
Low breakdown voltages of the formed $Al_2O_3$ layer have been found to be mainly due to non-ideal, sharp and rough surfaces in the metal pattern edge.
The breakdown voltage can be improved by long anodization time of about two hours or by 'anodize and $Al_2O_3$ etch before anodization' method.

• 형태사항: [iii], 70 p. : 삽화 ; 26 cm
• 언어: 한국어
• 일반주기: 저자명의 영문표기 : Yun-Seung Shin ; 지도교수의 한글표기 : 김충기 ; 지도교수의 영문표기 : Choong-Ki Kim
• 학위논문: 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
• 서지주기: 참고문헌 : p. 67-68
• 주제: Integrated circuits. ; Aluminum. ; Breakdown voltage. ; 양극 처리법. --과학기술용어시소러스 ; 집적 회로. --과학기술용어시소러스 ; 복소 유전율. --과학기술용어시소러스 ; Metals --Anodic oxidation.