서지주요정보
Fabrication of the integrated injection logic by new process = 새로운 제작 방법에 의한 Integrated injection logic 의 제작
서명 / 저자 Fabrication of the integrated injection logic by new process = 새로운 제작 방법에 의한 Integrated injection logic 의 제작 / Chul-Hi Han.
저자명 Han, Chul-Hi ; 한철희
발행사항 [서울 : 한국과학기술원, 1979].
Online Access 원문보기 원문인쇄

소장정보

등록번호

4000754

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 7928

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초록정보

A modified $I^2L$ structure having self-aligned collectors and heavy doping in the extrinsic base region has been fabricated by a new process requiring only five masks. The new fabrication process, which uses the spin-on sources as the diffusion sources, utilizes the hardened spin-on source as a diffusion mask. The sheet resistance in the intrinsic base region can be controlled independently by this new process. $I^2L$ test devices including 13-stage ring oscillator have been fabricated with silicon wafers of 6.5㎛ epi-layer by the new process. An upward npn current gain of 8 for a three-collector $I^2L$, a speed power product of 3.5 pJ and a minimum propagation delay time of 50 ns with standard device breakdown (BV$_{CEO}$) of 22 volts have been obtained. And the test results show that the current gain control of the npn transistor can be easily achieved by varying the sheet resistance in the intrinsic base region during boron predeposition step.

서지기타정보

서지기타정보
청구기호 {MEE 7928
형태사항 [v], 58 p. : 삽도 ; 26 cm
언어 영어
일반주기 저자명의 한글표기 : 한철희
지도교수의 영문표기 : Choong-Ki Kim
지도교수의 한글표기 : 김충기
학위논문 학위논문 (석사) - 한국과학기술원 : 전기및전자공학과,
서지주기 Reference : p. 55-58
주제 Semiconductor --Doping.
Breakdown voltage.
Oscillators, electric.
IIL. --과학기술용어시소러스
링 발진기. --과학기술용어시소러스
Integrated injection logic.
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