The integrated injection logic ($I^2L$) is a new bipolar logic with the advantages of the conventional bipolar logic and the MOS logic in speed, density and power dissipation. These advantages make $I^2L$ Suitable for large scale integration (LSI).
The basic cell is made up of a vertical multicollector n-p-n transistor as inverter and a lateral p-n-p transistor as current source.
In this paper, $I^2L$ will be discussed guantitatively for the current gains and the logic levels. The effect of a parasitic p-n-p transistor will be also discussed. Finally, the experimental results from the test chip fabricated for this study will be analyzed on the basis of the calculated values by using the derived equations.
