Operating avalanche diodes in high-efficiency mode, one may obtain higher power output in UHF or microwave region.
TRAPATT theory for the high-efficiency mode operation in avalanche diodes is introduced, where diode behaviors are described in terms of DC characteristics and its physical parameters.
Circuits to sustain high-efficiency oscillations are designed and realized by using microstrip lines on epoxy boards. Negative restance of the avalanche diode operating in TRAPATT mode is obtained by measuring the passive circuit impedance seen from the diode terminal, provided that the passive circuit is well tuned for TRAPATT oscillations.
From a computer signal diode, FD-300, 35 Watts peak output power is obtained and its equivalent active impedance is measured approximately by -23 -j24 Ohms in the frequency range from 680 to 750㎒.
II 에서는 TRAPATT 이론을 설명하여 avalanche 다이오드가 고효율 동작할때의 물리적 현상을 다루었고, TRAPATT 발진에 필요한 발진회로의 특성에 관하여 고찰하였다. 실험에서는 microstrip 으로 발진기 제작에 필요한 정보를 제공하고 발진기를 제작하여 특성을 측정하였다. 또한 능동 소자의 등가 임피던스를 외부 회로의 임피던스 를 측정함으로 구하였다.
