서지주요정보
Inverted floating gate EAROM의 특성 = Characteristics of inverted floating gate EAROM
서명 / 저자 Inverted floating gate EAROM의 특성 = Characteristics of inverted floating gate EAROM / 강진영.
저자명 강진영 ; Kang, Jin-Yeong
발행사항 [대전 : 한국과학기술원, 1991].
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소장정보

등록번호

8001520

소장위치/청구기호

학술문화관(문화관) 보존서고

DAP 9101

SMS전송

도서상태

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반납예정일

초록정보

Memory devices are classified into non-volatile memories and volatile momories. The former are not erasable by power off and the latter are erasable. Among non-volatile memories, semiconductor ROM's are classified into EPROM which is electrically programmable only and EAROM which is both electrically programmable and erasable. Since the conventional EAROM has short programming-erasing endurance, its properties may be changed after $10^3~10^4$ of programming -erasing cycle and needs programming-erasing time of 1~10 msec. The conventional EAROM devices are not used commonly yet due to the above reasion. In this research, the inverted floating gate EAROM was designed and fabricated. This device has the structure of inverted floating gate to the control gate as compared with that of the conventional device. The floating gate is located above the control gate, and the control gate is located below the floating gate and above the channel. This structure improves operational stability since it suppresses inter-polysilicon oxide current at programming and prohibits channel leakage current at erasing. As a result, the inverted floating gate device exhibits good programming/erasing characteristics and endurance with threshold voltage shift less than 0.3V after $10^6$ programming-erasing cycles. Also it shows higher operational voltage margins and wider programming-erasing windows than the conventional one under practical operating conditions. Moreover, this strucrure has capability of god capacitor coupling ratio of the control gate as compared to conventional type. Therefore it can lead to lower operation voltage or reduced programming/erasing time.

서지기타정보

서지기타정보
청구기호 {DAP 9101
형태사항 v, 176 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jin-Yeong Kang
지도교수의 한글표기 : 이상수
지도교수의 영문표기 : Sang-Soo Lee
학위논문 학위논문(박사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 127-133
주제 Read-only memory
Electric properties
기억 소자 --과학기술용어시소러스
ROM --과학기술용어시소러스
전기 특성 --과학기술용어시소러스
Magnetic memory
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