서지주요정보
소결 CdS 막의 제조와 전기적 성질 = Preparation and electrical properties of sintered Cds layers
서명 / 저자 소결 CdS 막의 제조와 전기적 성질 = Preparation and electrical properties of sintered Cds layers / 양홍근.
발행사항 [서울 : 한국과학기술원, 1985].
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소장정보

등록번호

4102844

소장위치/청구기호

학술문화관(문화관) 보존서고

DMS 8511

휴대폰 전송

도서상태

이용가능(대출불가)

사유안내

반납예정일

리뷰정보

초록정보

The CdS layers for CdS/CdTe heterojunction solar cell application have been prepared by screen printing and sintering. The slurry for screen printing is a mixture of CdS powder, $CdCl_2$ powder and propylene grycol. Electrical properties of sintered CdS layers have been investigated by the measurements of electrical resistance, Hall effect and temperature dependence of resistance. The Microstructures and electrical resistivity of sintered CdS layers were closely related to the preparation condition, such as the amount of $CdCl_2$ added to the slurry, the heating rate and the sintering temperature and time. The grain size of CdS increased with the larger $CdCl_2$ addition, the higher sintering temperature and the longer sintering time. And the CdS grains grew to a maximum size fo about 15 ㎛ m$ in the specimen with 10wt.% $CdCl_2$ initially, sintered at 650℃ for 30 min. It was found that the more $CdCl_2$ was added to the slurry, the more Cl was left in the sintered CdS layers. These phenomena were explained on the basis of enhanced sintering and evaporation of the initially added $CdCl_2$. From Hall effect and resistivity of the sintered layers, measured at room temperature, it was observed that the carrier concentrations of the layers increased as sintering temperature and the amount of added $CdCl_2$ (up to 6 wt.%) increased, and that the carrier mobility of the layers increased up to a certain range of $CdCl_2$ added and sintering temperature and time. These results were discussed in terms of donor dopings for CdS grains and potential barriers due to the grain boundary states. In the sintered layers obtained by this experiment, photosensitivity was weak because of high carrier concentrations of $~10^{17}cm^{-3}$ and low potential barriers. The sintered CdS layers were annealed in $H_2$, $N_2$ and Ar. The layers of high resistivity (about 10Ω·cm) showed the sharp drop in resistivity in Ar, $H_2$ (more shap in $H_2$) but those of low resistivity (about $10^{-1} Ω·cm) showed a decrease only in $H_2$ atmosphere. These were explained in terms of evaporation of $CdCl_2$ left at grain boundaries and the increased donor densities due to $Cd^{ex}$.

서지기타정보

서지기타정보
청구기호 {DMS 8511
형태사항 iv, 99 p. : 삽화, 사진 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hong-Geun Yang
지도교수의 한글표기 : 임호빈
지도교수의 영문표기 : Ho-Bin Im
학위논문 학위논문(박사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 92-96
주제 Sloar cells.
Microstructure.
Sintering.
태양 전지. --과학기술용어시소러스
소결. --과학기술용어시소러스
미세 구조. --과학기술용어시소러스
황화카드뮴. --과학기술용어시소러스
Cadmium sulphide photoconductive cells.
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