The ECR plasma CVD apparatus which has many merits in the field of thin film process for the semiconductor devices and the gas sensor, was designed and made.
The ECR PECVD apparatus can be devided into two part. First is the plasma source which create ECR plasma. The microwave created form the magnetron flow through the waveguide to the quartzs bell jar, resonated in the jar by the magnetic field formed by the magnetic coil and plasma is formed. The created plasma extend into the reaction chamber by the magnetic field gradient and excite the source gas which react on the surface of the substrate. The source gases used were TMA and $N_2O$ and the plasma was mainly created by Ar gas.
The deposited $Al_2O_3$ films were analysed using AES, SEM, FTIR and Ellisometer, and the result was that the films created contained less $H_2O$ in lower temperature compared to the $Al_2O_3$ thin films deposited using RF PECVD. SEM pictures revealed that the films grew in columnal structure. AES result showed that the films contained small amount of carbon and nitrogen. From above results, one can conclude was that ECR PECVD deposits very dense films.
