Lead titanate ($PbTiO_3$) and Lanthanum modified lead titanate ($La-PbTiO_3$) thin films on silicon wafers were prepared by RF/DC magnetron sputtering technique. The relationships between deposition rates and various process parameters such as gas composition, working pressures, input power, distances from target to substrate, and target composition were studied. X-ray diffractometer, scanning electron microscope(SEM), and transmission electron microscope(TEM) were used to characterize the film crystal structure, and microstructures. The $PbTiO_3$ and La modified $PbTiO_3$ films deposited at room temperature and followed by post annealing below $450\circ \!C$ did not appear X-ray peak of $PbTiO_3$. The films deposited at room temperature and annealed above $550\circ \!C$ appeared X-ray peak of $PbTiO_3$. The films deposited above $550\circ \!C$ also appeared X-ray peak of $PbTiO_3$. The surface of $PbTiO_3$ films deposited at room temperature and followed by post annealing showed large voids and cracks, but deposited at high temperature showed a dense array of fibrous grains without large voids and cracks. The deposition rates of the films had a maximum value at 7.5 mtorr of working pressure. The crystallography of the domains in lead titanate are studied using transmission electron microscopy. $90\circ \!C$ domains are observed and the $90\circ \!C$ domains are shown to be deformation twins with displacement along <1 1 0> on {1 1 0}.
