서지주요정보
TiN Glue Layer위에 화학증착된 텅스텐박막에 관한 연구 = A study on the tungsten films prepared by LPCVD on TiN glue layer
서명 / 저자 TiN Glue Layer위에 화학증착된 텅스텐박막에 관한 연구 = A study on the tungsten films prepared by LPCVD on TiN glue layer / 장규환.
저자명 장규환 ; Chang, Kyu-Hwan
발행사항 [대전 : 한국과학기술원, 1992].
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8002859

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 92020

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초록정보

Tungsten films deposited by LPCVD on TiN glue layers were studied in order to improve its properties such as adherence to substrate, residual stress and surface morphology through optimizing the deposition condition. Silicon wafer specimens on which TiN had been deposited through the reactive sputtering were exposed to argon plasma before the deposition of tungsten for the purpose of native $TiO_2$ elimination. Varying the deposition temperature and $WF_6/SiH_4$ input gas ratio, the deposition of tungsten films was performed. The residual stresses and adhesion strengths of the films were measured. The surface morphologies of tungsten deposits were observed by SEM and the textures and the crystal structures were analysed by XRD. The deposition reaction is typical thermally-activated process and its apparent activation energy is around 0.47eV. The electrical resistivity of the film is 8-9μΩ·㎝. With the increase of deposition temperature, residual tensile stress reduces and adhesion strength increases. $WF_6/SiH_4$ input gas ratio less than 1 induces higher residual stress within the deposits. The higher $WF_6/SiH_4$ input gas ratio, the better the adherence of the tungsten film to TiN surface. Especially, the tungsten films grown at $WF_6/SiH_4$ input ratio less than 1, show different morphologies and textures from those of the films deposited at higher $WF_6/SiH_4$ ratio. From the results above mentioned, it is found that the deposition conditions, temperature higher than 340℃ and $WF_6/SiH_4$ input gas ratio larger than 1, would be available for the blanket tungsten deposition as a 1st level interconnection in ULSI.

서지기타정보

서지기타정보
청구기호 {MMS 92020
형태사항 [iii], 53 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Kyu-Hwan Chang
지도교수의 한글표기 : 천성순
지도교수의 영문표기 : Soung-Soon Chun
학위논문 학위논문(석사) - 한국과학기술원 : 전자재료공학과,
서지주기 참고문헌 : p. 51-53
주제 Thin films.
Adhesion.
Residual stresses.
Chemical vapor deposition.
화학 증착. --과학기술용어시소러스
금속 박막. --과학기술용어시소러스
접착. --과학기술용어시소러스
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