The properties of μc-Si:H prepared by ECR-PECVD were studied. Amorphous to microcrystalline phase transition was occurred at the substrate temporature (Ts) above 100 ℃,and at the pressure above 2.4 mTorr. The grain size of μc-Si:H was larger as Ts was raised, but smaller as the microwave power was increased.
Hydrogen dilution during deposition strongly affected the formation of microcrystal and the film growth. More conductive film was deposited at low pressure than at high pressure with increasing hydrogen dilution ratio. Structural and electical properties of μc-Si:H were changed largely by hydrogen etching effect.
