서지주요정보
ECR 플라즈마의 전산모델링에 관한 연구 = Computer modeling of ECR plasma
서명 / 저자 ECR 플라즈마의 전산모델링에 관한 연구 = Computer modeling of ECR plasma / 김용진.
발행사항 [대전 : 한국과학기술원, 1992].
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소장정보

등록번호

8002562

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 92006

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리뷰정보

초록정보

The computer program for prediction of plasma parameter, density, electron temperature, and etc., of ECR(electron cyclotron resonance) plasma which is used in etching and thin film deposition for semiconductor was developed, by which the parameters were predicted in various conditions. The general transport equation was developed after physical consideration of interactions in the plasma and spatially averaged to yield the equation of the averaged quantities with which the equation of ambipolar potential derived from the relations of quasi-neutrality, Boltzmann distribution of electron density, conservation of density and magnetic field flux, and free fall model of the ion were used for deriving the equation of the half dimensional model. The numerical solutions of these two, averaged transport equation and equation of the ambipolar potential, were calculated at the steady state. The implicit FDM(finite difference method), with time and the distance along axis as independents, was used as a numerical method for the calculation of the variation of the spatial averages for plasma density, electron temperature and ion temperature, and the distribution of the ambipolar potential and the plasma density along the axis. The results of the calculations with various microwave power absorbed by the plasma, initial kinetic energy of the ion given by the potential drop in the ECR layer, and neutral gas pressure are as follows. The plasma density is about linearly proportional to the power absorbed by the plasma and the ionization efficiency is maximized at a particular neutral gas pressure. The electron temperature crucially depends on neutral gas pressure and the ambipolar potential which makes a dominant effect on ion energy is similar to electron temperature in the dependence. The plasma density decreases as the distance from the ECR layer increases along axis.

서지기타정보

서지기타정보
청구기호 {MAP 92006
형태사항 ii, 37 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Yong-Jin Kim
지도교수의 한글표기 : 장충석
공동교수의 한글표기 : 문희태
지도교수의 영문표기 : Choong-Seock Chang
공동교수의 영문표기 : Hie-Tae Moon
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 수록
주제 Computer simulation.
Plasma (Ionized gases)
ECR 이온원. --과학기술용어시소러스
사이클로트론 공명. --과학기술용어시소러스
플라스마 시뮬레이션. --과학기술용어시소러스
Cyclotron resonance.
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