The characteristics of poly-Si TFTs fabricated using poly-Si film deposited from $SiH_4$(silane) and $Si_2H_6$(disilane) have been investigated. The deposition temperature used in depositing poly-Si films, which affects significantly the structural characteristics of the deposited poly-Si film, was kept constant. the electrical characteristics of the poly-Si TFT with a poly-Si film deposited from $Si_2H_6$ were superior to that of the poly-Si TFT with a poly-Si film deposited from $SiH_4$. this difference in the electrical characteristics between two poly-Si TFTs may result from the difference in the structural characteristics between two poly-Si TFTs may result from the difference in the structural characteristics between two poly-Si films used as the active layer; that is, the poly-Si film deposited from $Si_2H_6$ has much better structural characteristics than that deposited from $SiH_4$ in the crystallinity, grain size, and microstructures. It can be concluded that the structural characteristics of a poly-Si film deposited from $Si_2H_6$ is superior to that deposited from $SiH_4$ and that the superiority of the structural characteristics leads to the superiority of the electrical characteristics.
