The solid phase crystallization behavior of amorphous silicon thin films by annealing in
$AlCl_3$ was investigated. The amorphous silicon thin films were deposited by low pressure chemical vapor deposition (LPCVD) using $Si_2Cl_6$ and $H_2$ gas, and annealed in $AlCl_3$ atmosphere.
The $AlCl_3$ atmosphere induces crystallization of amorphous silicon thin films. The amorphous silicon thin films annealing in $AlCl_3$ atmosphere were almost completely crystallized after 5 hours at 560℃. The metal induced crystallization of amorphous silicon thin films using
$AlCl_3$ atmosphere method lowered the annealing temperature and reduced the annealing time for complete crystallization.
The concentration of Al in the annealed Si film is below 100ppm, AES detection limit above a few ppm, SIMS detection range.
Viscous $AlCl_3$ aqueous solution spin coating method is non-effective to lower the annealing temperature and reduce annealing time. Because spin coated film makes $Al_2O_3$.
