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Design optimization techniques for RF CMOS low noise amplifier
서명 / 저자 Design optimization techniques for RF CMOS low noise amplifier / Trung-Kien Nguyen.
발행사항 [대전 : 한국정보통신대학교, 2004].
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DM0000522

소장위치/청구기호

학술문화관(문화관) 보존서고

ICU/MS04-95 2004

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초록정보

This thesis reviews and analyzes four reported low noise amplifier (LNA) design techniques applied to the cascode topology based on CMOS technology: classical noise matching (CNM), simultaneous noise and input matching (SNIM), power-constrained noise optimization (PCNO), and power-constrained simultaneous noise and input matching (PCSNIM) techniques. Very simple and insightful sets of noise parameter expressions are newly introduced for the SNIM and PCSNIM techniques. Based on the noise parameter equations, this work provides clear understanding of the design principles, the fundamental limitations, and the advantages of the four reported LNA design techniques so that the designers can get the overall LNA design perspective. As a demonstration for the proposed design principle of the PCSNIM technique, a very low power folded-cascode LNA is implemented based on 0.25 $\mum$ CMOS technology for 900 MHz applications. Measurement results show the noise figure of 1.35 dB, power gain of 12 dB, and IIP3 of -4 dBm while dissipating 1.6 mA from 1.25 V supply (0.7 mA for the input NMOS transistor only). The overall behavior of the implemented LNA shows good agreement with theoretical predictions. The most commonly used receiver architecture is the superheterodyne. However, in a monolithic implementation, image cancellation is difficult due to the limitation of on-chip filter. The use of image rejection architecture alleviates this problem to some extent. To augment the amount of image rejection beyond what is practically achieved by the image rejection architecture, a tracking notch filter is integrated with the low noise amplifier. The proposed IR-LNA is optimized for 5.25 GHz WLAN with IF frequency of 500 MHz applications. The measurement results show power gain of 20.5 dB, lower than 1.5 dB NF, and image rejection of 26 dB, Two-tone test results indicate -5 dBm and -8 dBm of IIP3 for the case of using and not using the notch filter, respectively. The circuit operates at supply voltage of 3 V, and dissipates 4 mA in 0.18 $\mum$ CMOS technology.

서지기타정보

서지기타정보
청구기호 {ICU/MS04-95 2004
형태사항 v, 62 p. : 삽화 ; 26 cm
언어 영어
일반주기 지도교수의 영문표기 : Sang-Gug Lee
지도교수의 한글표기 : 이상국
학위논문 학위논문(석사) - 한국정보통신대학원대학교 : 공학부,
서지주기 References : p. 48-53
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