A X-Band power amplifier module for high power is implemented. This power module is implemented on PCB using 4 MMIC power amplifier. The MMIC power amplifier has partially matched input matching and output matching circuit. The advantage of this configuration is easily tuning possible for high performance power amplifier. 3 version MMIC power amplifier is designed and high performance MMIC is selected for implementaion high power module. The demonstration chip is designed and simulated using Konwledge-on InGaP/GaAs HBT process. 12finger power transistor is used for MMIC power amplifier. This power transistor shows improved frequency characteristics. From simulation results using HPADS, it has been demonstrated that output power would be 40dBm at power module using parallel 4 MMIC. The measurement results show that the output power of power module is over 34dBm at P1dB point.