서지주요정보
차세대 비휘발성 메모리 응용을 위한 비정질 실리콘 박막 및 전극 구조 개발 = Development of silicon thin film and electrode structure for application of advanced non-volatile memory
서명 / 저자 차세대 비휘발성 메모리 응용을 위한 비정질 실리콘 박막 및 전극 구조 개발 = Development of silicon thin film and electrode structure for application of advanced non-volatile memory / 서중원.
저자명 서중원 ; Seo, Jung-Won
발행사항 [대전 : 한국과학기술원, 2005].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8016228

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 05041

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Metal/a-Si:H/metal thin film structures have been widely used in various applications as reversible and irreversible memory switching devices. Theses memory switching devices can change their resistance in discrete jumps or continuously depending upon the applied voltage. During the electroforming, some parts of the top metal material diffuse into the a-Si:H matrix, resulting in the creation of a highly conducting filament which decreases device resistance from a high value of 1 to 100 M$\ohm$ irreversibly, to approximately 1 K$\ohm$ or below. In this experiment, we fabricated metal/p-a-Si:H/metal structure switching devices with 4 different top metals (Cr, Ni, Al and Ag) using photo-CVD. The boron doped p-a-Si:H, with a layer thickness 0.2 ㎛, was prepared by UV decomposition of silane $(SiH_4)$ containing typically $1.2 x 10^4$ ppm by volume of diborane $(B_2H_6)$. Instead of applying the voltage pulse for electroforming and switching, we swept the voltage to investigate the switching properties of devices. The experiments showed that devices have low electroforming & switching voltage (~ 10 V or less, < 5 V) and very high resistance ratio $(~ 10^6)$ compared with conventional devices.

서지기타정보

서지기타정보
청구기호 {MEE 05041
형태사항 [iii], 61 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Jung-Won Seo
지도교수의 한글표기 : 임굉수
지도교수의 영문표기 : Koeng-Su Lim
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공,
서지주기 참고문헌 : p. 58-59
주제 비휘발성
메모리
비정질
실리콘
Non-volatile
memory
silicon
thin film
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