LTQWIP(Lateral Transport QWIP) is proposed and fabricated utilizing pHEMT structure for the first time. This LQWIP could detect mid-infrared light (range 3.5㎛ to 7.7㎛) with detectivity over $1×10^{10} (cmHz^{1/2}/W)$. The maximum responsivity and detectivity was 144A/W and $2×10^{10}(cmHz^{1/2}/W)$ at 6㎛. The responsivity of LQWIP is hundreds times larger than that of vertical QWIP. This large responsivity is due to photo current gain related to trans-conductance ($G_m$) of HEMT structure. LTQWIP structure integrates QWIP into HEMT. So, the gain of HEMT is used for infrared detection.
This thesis includes basic QWIP concept and the fabrication procedure of LTQWIP. Low temperature I-V characteristics that can be found only in LQWIP are discussed. The large photocurrent is explained by $G_m$ and gain mechanism of LQWIP with reasonable quantum efficiency.
