서지주요정보
반응성 스퍼터링법으로 증착된 코발트 나이트라이드(Co-N) 박막을 이용한 (100) Si 기판에서의 $CoSi_{2}$ 에피층 형성에 관한 연구 = Formation of epitaxial $CoSi_{2}$ layer on (100) Si substrate using cobalt nitride(Co-N) film deposited by reactive sputtering
서명 / 저자 반응성 스퍼터링법으로 증착된 코발트 나이트라이드(Co-N) 박막을 이용한 (100) Si 기판에서의 $CoSi_{2}$ 에피층 형성에 관한 연구 = Formation of epitaxial $CoSi_{2}$ layer on (100) Si substrate using cobalt nitride(Co-N) film deposited by reactive sputtering / 이승렬.
저자명 이승렬 ; Lee, Seung-Ryul
발행사항 [대전 : 한국과학기술원, 2004].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8015082

소장위치/청구기호

학술문화관(문화관) 보존서고

MAME 04022

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

In ultra-large scale integrated(ULSI) circuits technology, metal silicides have been used to reduce the contact resistance in the source/drain and gate regions. Among the silicides, cobalt disilicide($CoSi_2$) is suitable for nanoscale devices because of its low resistivity and line-width independence, good chemical stability. Moreover, cobalt disilicide can be epitaxially grown on Si substrates due to its small lattice mismatch(-1.2%) and cubic structure. However, the growth of epitaxial (100) $CoSi_2$ on (100) Si substrate has not been successfully realized by physical vapor deposition(PVD) of pure Co and a subsequent annealing process due to the formation of $CoSi_2$ with the various epitaxial orientations. Up to now, several techniques such as interlayer mediated epitaxy, molecular beam epitaxy, and reactive deposition epitaxy have been proposed for the growth of epitaxial $CoSi_2$. However, the techniques require complicated tools and multistep process not commonly used in silicon processing. In this thesis, a new method for formation of epitaxial $CoSi_2$ layer has been proposed and studied. Epitaxial $CoSi_2$ layers have been formed on a (100) Si substrate at temperature above 600℃ by ex-situ rapid thermal annealing(RTA), followed by the deposition of 17nm thick Co-N film by reactive sputtering of cobalt with (Ar+N2) gas. This method, using cobalt nitride(Co-N) film, offers advantage of no deposition process for diffusion barriers such as Ti, Ta, and chemical oxide. Two amorphous layers were founded at the interface of cobalt nitride(Co-N) and Si in initial deposition stage. The upper amorphous layer is a silicon nitride state that successfully prevents the diffusion of Co at temperature below 600℃ and lower amorphous layer has a Co-Si intermixing state that comes from the inter-diffusion of Co and Si in the initial deposition stage. The supply of Co into Si by diffusion through the Si-N amorphous layer seems to be low enough, resulting in an epitaxial $CoSi_2$ layer on (100) Si substrate. A uniform epitaxial $CoSi_2$ layer, with flat interface, has been able to grow on (100) Si substrate using a Co/Co-N bilayer with 1nm thick Co-N film. In the Co/Co-N bilayer structure, the two amorphous layers were also observed at the interface. And then, thin and uniform layer of epitaxial $CoSi_2$ with 20nm thickness could be formed using the bilayer as the thickness of Co on the Co-N interlayer decreases to 7nm thick.

서지기타정보

서지기타정보
청구기호 {MAME 04022
형태사항 iii, 84 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Seung-Ryul Lee
지도교수의 한글표기 : 안병태
지도교수의 영문표기 : Byung-Tae Ahn
학과명칭변경 : 재료공학과가 신소재공학과로 변경됨
학위논문 학위논문(석사) - 한국과학기술원 : 신소재공학과,
서지주기 참고문헌 : p. 81-84
주제 코발트 실리사이드
코발트 나이트라이드
에피층
반응성 스퍼터링
에피택셜 코발트 실리사이드
$COSI_{2}$
COBALT SILICIDE
COBALT NITRIDE
CO-N
EPITAXIAL COBALT SILICIDE
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